US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Methods for patterning a silicon oxide-silicon nitride-silicon oxide stack and structures formed by the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,333, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Methods for patterning a silicon oxide-silicon nitride-silicon oxide stack and structures formed by the same" was invented by Yi-Ren Wang (New Taipei, Taiwan) and Yuan-Chih Hsieh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A layer stack is formed over a conductive material portion located on a substrate. The layer stack contains a first silicon oxide layer, a silicon nitride layer formed by chemical vapor deposition, and a second silicon oxide layer. A patterned etch mask layer including an opening is formed over the layer stac...