US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Method of optimizing film deposition process in semiconductor fabrication by using gas sensor" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,335, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method of optimizing film deposition process in semiconductor fabrication by using gas sensor" was invented by Rei-Lin Chu (Hsinchu, Taiwan), Chih-Ming Chen (Hsinchu, Taiwan), Chung-Yi Yu (Hsinchu, Taiwan) and Yeur-Luen Tu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In accordance with some embodiments, a method for processing semiconductor wafer is provided. The method includes introducing a first processing gas of an atomic layer deposition (ALD) process on the semiconductor substrate in a chamber; introducing a second proces...