US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Method of forming semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,192, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming semiconductor device" was invented by Yu-Chao Lin (Hsinchu, Taiwan), Tung-Ying Lee (Hsinchu, Taiwan), Yuan-Tien Tu (Chiayi County, Taiwan) and Jung-Piao Chiu (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a bottom electrode, a memory element, spacers, a selector and a top electrode. The memory element is located on the bottom electrode and includes a first conductive layer, a second conductive layer and a storage layer. The first conductive layer is electrically connected to the bottom el...