US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Method of forming metal oxide layer using deposition apparatus" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,331,398, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming metal oxide layer using deposition apparatus" was invented by Ming-Fa Wu (Kaohsiung, Taiwan), Wen-Lung Ho (Hsinchu County, Taiwan) and Jheng-Long Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition appar...