US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Method for forming semiconductor structure using fluorine to treat gate stack" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,273, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for forming semiconductor structure using fluorine to treat gate stack" was invented by Pei Ying Lai (Hsinchu, Taiwan), Chia-Wei Hsu (Taipei, Taiwan), Tsung-Da Lin (Pingtung County, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. The method includes forming a first fin structure over a first region of a substrate and forming a second fin structure over a second region of a substrate, forming a first gate dielectric layer around the first fin ...