ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,265, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Metal gate structures for field effect transistors" was invented by Chih-Wei Wang (Hsinchu, Taiwan), Chia-Ming Tsai (Hsinchu, Taiwan), Ke-Chih Liu (Hsinchu, Taiwan), Chandrashekhar Prakash Savant (Hsinchu, Taiwan) and Tien-Wei Yu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a ...