ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,244, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Metal caps for gate structures" was invented by Shih-Hang Chiu (Taichung, Taiwan), Chung-Chiang Wu (Taichung, Taiwan), Wei-Cheng Wang (Hsinchu, Taiwan), Chia-Wei Chen (Hsinchu, Taiwan), Jian-Hao Chen (Hsinchu, Taiwan), Kuan-Ting Liu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a gate structure. The gate structure includes a gate dielectric layer, an n-type ...