US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Memory structure having air gap and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,174, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory structure having air gap and method for manufacturing the same" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate and a memory structure disposed over the substrate. The memory structure includes a pair of first conductive lines, a channel element disposed between the pair of the first conductive lines and formed with an air gap therein, a first memory element disposed to separate one of the pair of the first conduc...