ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,442, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device with bottom electrode" was invented by Hsia-Wei Chen (Taipei, Taiwan), Chih-Hung Pan (Taichung, Taiwan), Chih-Hsiang Chang (Taichung, Taiwan), Yu-Wen Liao (New Taipei, Taiwan) and Wen-Ting Chu (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a bottom electrode, a buffer element, a metal-containing oxide portion, a resistance switch element, and a top electrode. The buffer element is over the bottom electrode. The metal-containing oxide portion is over the buffer element, in which the meta...