US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Memory cell array with increased source bias voltage" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,180, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory cell array with increased source bias voltage" was invented by Chen-Jun Wu (Hsinchu, Taiwan), Sun Yi Chang (New Taipei, Taiwan), Sheng-Chih Lai (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell array is provided. The memory cell array includes: a plurality of memory cells arranged in a plurality of rows and a plurality of columns; a plurality of word lines electrically connected to the plurality of rows, respectively; a plurality of source lines electrically connected to the plur...