ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,389, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Manufacturing method of semiconductor device" was invented by Chi-Ming Chen (Hsinchu County, Taiwan), Kuei-Ming Chen (New Taipei, Taiwan), Po-Chun Liu (Hsinchu, Taiwan), Chung-Yi Yu (Hsin-Chu, Taiwan) and Chia-Shiung Tsai (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An etch stop layer is formed on the sacrificial substrate. A portion of the etch stop layer is oxidized to form an oxide layer between the sa...