US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Isolation structure and a self-aligned capping layer formed thereon" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,388, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Isolation structure and a self-aligned capping layer formed thereon" was invented by I-Wen Wu (Hsinchu, Taiwan), Po-Yu Huang (Hsinchu, Taiwan), Chen-Ming Lee (Taoyuan County, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods are provided. An exemplary method according to the present disclosure includes providing a workpiece including a semiconductor fin protruding from a substrate, a first placeholder gate and a second placeholder gate o...