US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Interconnect structure including graphite and method forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,397, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect structure including graphite and method forming same" was invented by Shu-Cheng Chin (Hsinchu, Taiwan), Chih-Yi Chang (New Taipei, Taiwan), Wei Hsiang Chan (Hsinchu, Taiwan), Chih-Chien Chi (Hsinchu, Taiwan), Chi-Feng Lin (Hsinchu, Taiwan) and Hung-Wen Su (Jhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first conductive feature, depositing a graphite layer over the first conductive feature, patterning the graphite layer to form a graphite conductive feature, depositing a dielectric spacer laye...