ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,439, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Interconnect structure in semiconductor devices" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes transistors over a substrate, and first, second, and third metallization layers over the transistors. The first, second, and third metallization layer includes first, second, and third metal features, respectively. The second metal features are oriented lengthwise substantially perpendicular to the first metal features, and the third metal features are oriented length...