US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Inner spacer formation in multi-gate transistors" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,252, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Inner spacer formation in multi-gate transistors" was invented by Han-Yu Lin (Nantou County, Taiwan), Chansyun David Yang (Shinchu, Taiwan), Tze-Chung Lin (Hsinchu, Taiwan), Fang-Wei Lee (Hsinchu, Taiwan), Fo-Ju Lin (Keelung, Taiwan), Li-Te Lin (Hsinchu, Taiwan) and Pinyen Lin (Rochester, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes forming a fin on a semiconductor substrate. The fin includes channel layers and sacrificial layers stacked one on top of the other in an alternating fashio...