US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,281, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereof" was invented by Chia-Hao Pao (Kaohsiung, Taiwan), Chih-Hsuan Chen (Hsinchu, Taiwan), Lien-Jung Hung (Taipei, Taiwan) and Shih-Hao Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereof are disclosed herein. An exemplary metal gate includes a first portion, a second portion, and a third portion. The second portion ...