US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Gate spacer and formation method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,249, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate spacer and formation method thereof" was invented by Yi-Rui Chen (Yilan County, Taiwan), Yi-Fan Chen (New Taipei, Taiwan), Szu-Ying Chen (Hsinchu, Taiwan), Sen-Hong Syue (Hsinchu County, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a sacrificial gate structure over a substrate, depositing a spacer layer on the sacrificial gate structure in a conformal manner, performing a multi-step oxidation process to ...