ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,222, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate-all-around devices with superlattice channel" was invented by Shin-Cheng Liu (Hsinchu, Taiwan) and Kuei-Shu Chang Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a substrate, a first superlattice structure and a second superlattice structure over the substrate, a gate stack that surrounds a channel region of each of the first superlattice structures and the second superlattice structure, and source/drain structures on opposite sides of the gate st...