US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Formation of transistor gates" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,251, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Formation of transistor gates" was invented by Yen-Jui Chiu (Hsinchu, Taiwan), Yao-Teng Chuang (Hsinchu, Taiwan) and Kuei-Lun Lin (Keelung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes following steps. A first gate dielectric layer is deposited over a first semiconductor channel and a second semiconductor channel. A second gate dielectric layer is deposited over the first gate dielectric layer. A layer is formed over the second gate dielectric layer using atomic layer deposition (ALD) cycles each comprising sequentially ...