US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Flat STI surface for gate oxide uniformity in Fin FET devices" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,217, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Flat STI surface for gate oxide uniformity in Fin FET devices" was invented by Cheng-Ta Wu (Shueishang Township, Taiwan), Cheng-Wei Chen (Tainan, Taiwan), Shiu-Ko Jangjian (Tainan, Taiwan) and Ting-Chun Wang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Operations in fabricating a Fin FET include providing a substrate having a fin structure, where an upper portion of the fin structure has a first fin surface profile. An isolation region is formed on the substrate and in contact with the fin structure. A portion of the isolatio...