US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Ferroelectric semiconductor device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,216, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric semiconductor device and method" was invented by Chia-Cheng Ho (Hsinchu, Taiwan), Ming-Shiang Lin (Hsinchu, Taiwan) and Jin Cai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric semiconductor device and method are described herein. The method includes performing a diffusion anneal process to drive elements of a dopant film through an amorphous silicon layer and into a gate dielectric layer over a fin to form a doped gate dielectric layer with a gradient depth profile of dopant concentrations. The doped g...