US Patent Issued to Taiwan Semiconductor Manufacturing on June 17 for "Dielectric layer on semiconductor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,211, issued on June 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dielectric layer on semiconductor device and method of forming the same" was invented by Cheng-I Lin (Hsinchu, Taiwan), Ming-Ho Lin (Taipei, Taiwan), Chun-Heng Chen (Hsinchu, Taiwan) and Yung-Cheng Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a first layer on a semiconductor fin; forming a mask on the first layer, the mask being thicker on a top of the semiconductor fin than along a sidewall of the semiconductor fin. The first layer is thinned along the sidewall of t...