ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,261, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsin-Chu, Taiwan).

"Contacts for highly scaled transistors" was invented by Carlos H. Diaz (Los Altos Hills, Calif.), Chung-Cheng Wu (Hsin-Chu County, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan), Jean-Pierre Colinge (Blot L'Eglise, France), Chun-Hsiung Lin (Hsinchu County, Taiwan), Wai-Yi Lien (Hsinchu, Taiwan) and Ying-Keung Leung (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and secon...