US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 17 for "Capacitor structure and method of making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,201, issued on June 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd. (Hsin-Chu, Taiwan).

"Capacitor structure and method of making the same" was invented by Jian-Shiou Huang (Fangliao Township, Taiwan), Chia-Shiung Tsai (Hsin-Chu, Taiwan), Cheng-Yuan Tsai (Chu Pei, Taiwan), Hsing-Lien Lin (Hsin-Chu, Taiwan) and Yao-Wen Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a semiconductor substrate, a conductor-insulator-conductor capacitor. The conductor-insulator-conductor capacitor is disposed on the semiconductor substrate and includes a first conductor, a nitrogenous dielectric layer and a s...