ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,721, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Ultraviolet radiation activated atomic layer deposition" was invented by Christine Y. Ouyang (Hsinchu, Taiwan) and Ziwei Fang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method of fabricating a semiconductor structure, the method includes forming an opening and depositing a metal layer in the opening. The depositing includes performing one or more deposition cycles, wherein each deposition cycle includes flowing a first precursor into a deposition chamber and performing an ultraviolet (UV) ra...