ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,917, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor structure having second contact structure over second side of first S/D structure" was invented by Lin-Yu Huang (Hsinchu, Taiwan), Li-Zhen Yu (New Taipei, Taiwan), Huan-Chieh Su (Tianzhong Township, Changhua County, Taiwan) and Chih-Hao Wang (Baoshan Township, Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes first nanostructures surrounded by a first gate structure, and a first source/drain (S/D) str...