US Patent Issued to Taiwan Semiconductor Manufacturing on June 10 for "Semiconductor FinFET device and method" (Taiwanese Inventor)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,729, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor FinFET device and method" was invented by Chih-Yu Wang (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a mask layer over a semiconductor substrate, etching the mask layer to form a patterned mask, wherein a sidewall of the patterned mask includes a first sidewall region, a second sidewall region, and a third sidewall region, wherein the first sidewall region is farther from the semiconductor substrate than the second sidewall region and the second sidewall region is farther from the semic...