US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 10 for "Semiconductor device with increased unity density" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,860, issued on June 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with increased unity density" was invented by You-Cheng Xiao (Taichung County, Taiwan), Jhih-Siang Hu (New Taipei, Taiwan), Ru-Yu Wang (New Taipei, Taiwan), Jung-Hsuan Chen (Hsinchu, Taiwan) and Ting-Wei Chiang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes at least one memory cell and at least one logic cell. The at least one logic cell is disposed next to the at least one memory cell. The at least one logic cell includes fins. The fins are separated into fin groups for form...