US Patent Issued to Taiwan Semiconductor Manufacturing on June 10 for "Passive cap for germanium-containing layer" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,723, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Passive cap for germanium-containing layer" was invented by Lung Yuan Pan (Hsinchu, Taiwan), Chen-Hao Chiang (Jhongli, Taiwan) and Chih-Ming Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a semiconductor device, including a substrate including a first semiconductor material and a semiconductor layer extending into an upper surface of the substrate and including a second semiconductor material with a different band gap than the first semiconductor material. The semiconduct...