US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 10 for "Method of manufacturing semiconductor devices and semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,940, issued on June 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor devices and semiconductor devices" was invented by Shahaji B. More (Hsinchu, Taiwan), Chandrashekhar Prakash Savant (Hsinchu, Taiwan), Tien-Wei Yu (Kaohsiung, Taiwan) and Chia-Ming Tsai (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region made of a semiconductor material, a first work function adjustment material layer is formed over the gate dielectric layer, an adhesion enhancement layer...