US Patent Issued to Taiwan Semiconductor Manufacturing on June 10 for "Method of forming thin dummy sidewall spacers for transistors with reduced pitches" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,929, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming thin dummy sidewall spacers for transistors with reduced pitches" was invented by Wen-Ju Chen (New Taipei, Taiwan), Chung-Ting Ko (Kaohsiung, Taiwan) and Tai-Chun Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first gate stack over a first semiconductor region, depositing a spacer layer on the first gate stack, and depositing a dummy spacer layer on the spacer layer. The dummy spacer layer includes a metal-containing material. An anisotropic etching process is performed on the du...