ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,886, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Metal-insulator-metal capacitor and methods of manufacturing" was invented by Min-Ying Tsai (Kaohsiung, Taiwan), Chih-Ping Chang (Tainan, Taiwan) and Ching I Li (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some implementations described herein provide a semiconductor device and methods of formation. The semiconductor device may include a photodiode device electrically connected to a metal-insulator-metal deep-trench capacitor. The metal-insulator-metal deep-trench capacitor includes a layer of an amorphous material between an ins...