ALEXANDRIA, Va., June 18 -- United States Patent no. 12,329,041, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Magnetic tunneling junction with synthetic free layer for SOT-MRAM" was invented by Chien-Min Lee (Hsinchu, Taiwan) and Shy-Jay Lin (Jhudong Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a spin-orbit torque (SOT) induction spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack disposed on the spin Hall electrode which is a synthetic anti-ferromagnetic structure. The free layer has a magnetic moment which is askew of the long axis of the MTJ stack and askew the direction of...