US Patent Issued to Taiwan Semiconductor Manufacturing on June 10 for "Ion implantation with annealing for substrate cutting" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,811, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ion implantation with annealing for substrate cutting" was invented by Huicheng Chang (Tainan, Taiwan), Jyh-Cherng Sheu (Hsinchu, Taiwan), Chen-Fong Tsai (Hsinchu, Taiwan), Yun Chen Teng (New Taipei, Taiwan), Han-De Chen (Hsinchu, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of ion implantation combined with annealing using a pulsed laser or a furnace for cutting substrate in forming semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a method inclu...