ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,965, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"In-situ cap for germanium photodetector" was invented by Chen-Hao Chiang (Jhongli, Taiwan), Eugene I-Chun Chen (Taipei, Taiwan) and Chih-Ming Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an optoelectronic device. The device includes a substrate, and a germanium photodiode region extending into an upper surface of the substrate. The germanium photodiode region has a curved upper surface that extends past the upper surface of the substrate. A silicon cap overl...