US Patent Issued to Taiwan Semiconductor Manufacturing on June 10 for "Hybrid integrated circuit dies and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,931, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Hybrid integrated circuit dies and methods of forming the same" was invented by Hong-Shyang Wu (Taipei, Taiwan) and Kuo-Ming Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a gallium nitride device on a substrate, the gallium nitride device including an electrode; a dielectric layer on and around the gallium nitride device; an isolation layer on the dielectric layer; a semiconductor layer on the isolation layer, the semiconductor layer including a silicon device; a through via extending throu...