US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 10 for "High voltage passive device structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,785, issued on June 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"High voltage passive device structure" was invented by Yuan-Yang Hsiao (Hsinchu, Taiwan), Hsiang-Ku Shen (Hsinchu, Taiwan), Wen-Chiung Tu (Hsinchu, Taiwan), Tsung-Chieh Hsiao (Changhua County, Taiwan), Chen-Chiu Huang (Hsinchu, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device structure according to the present disclosure includes a metal-insulator-metal (MIM) stack. The MIM stack includes at least one lower conductor plate layer, a first insulator layer disposed over the at least one lower cond...