US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 10 for "Gate to source drain interconnects" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,788, issued on June 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate to source drain interconnects" was invented by Shuen-Shin Liang (Hsinchu, Taiwan), Chia-Hung Chu (Hsinchu, Taiwan), Po-Chin Chang (Hsinchu, Taiwan), Tzu-Pei Chen (Hsinchu, Taiwan), Ken-Yu Chang (Hsinchu, Taiwan), Hung-Yi Huang (Hsinchu, Taiwan), Harry Chien (Hsinchu, Taiwan), Wei-Yip Loh (Hsinchu, Taiwan), Chun-I Tsai (Hsinchu, Taiwan), Hong-Mao Lee (Hsinchu, Taiwan), Sung-Li Wang (Hsinchu, Taiwan) and Pinyen Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes: for...