US Patent Issued to Taiwan Semiconductor Manufacturing on June 10 for "Gate structures for stacked semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,938, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate structures for stacked semiconductor devices" was invented by Mrunal Abhijith Khaderbad (Hsinchu, Taiwan), Sathaiya Mahaveer Dhanyakumar (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan) and Keng-Chu Lin (Ping-Tung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device and methods for forming the same. The semiconductor device includes a first transistor device of a first type and a second transistor device of a second type. The first transistor device includes first nanostructures, a f...