ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,930, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Gate structures for semiconductor devices" was invented by Chung-Liang Cheng (Changhua County, Taiwan) and Ziwei Fang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The structure of a semiconductor device with different gate structures configured to provide ultra-low threshold voltages and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes first and second nanostructured channel regions in first and second nanostructured layers, respectively, and first and second gate-all-around (GAA)...