US Patent Issued to Taiwan Semiconductor Manufacturing on June 10 for "Gate electrode deposition and structure formed thereby" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,923, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate electrode deposition and structure formed thereby" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a first work function tuning layer over a gate dielectric layer using an atomic layer deposition process. The atomic layer deposition process comprises depositing one or more first nitride monolayers; and depositing one or more carbide monolayers over the one or more first nitride monolayers. The method fu...