US Patent Issued to Taiwan Semiconductor Manufacturing on June 10 for "Deformation-resistant deep trench capacitor structure and methods of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,881, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Deformation-resistant deep trench capacitor structure and methods of forming the same" was invented by Fu-Chiang Kuo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate containing first-type deep trenches and second-type deep trenches. The first-type deep trenches and the second-type deep trenches have lengthwise sidewalls that laterally extend along different directions. The semiconductor structure includes a capacitor structure, which includes a layer stack containing at least three meta...