ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,890, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Contact with a silicide region" was invented by Yu-Wen Cheng (Tainan, Taiwan), Cheng-Tung Lin (Jhudong Township, Taiwan), Chih-Wei Chang (Hsinchu, Taiwan), Hong-Mao Lee (Hsinchu, Taiwan), Ming-Hsing Tsai (Chu-Pei, Taiwan), Sheng-Hsuan Lin (Zhubei, Taiwan), Wei-Jung Lin (Hsinchu, Taiwan), Yan-Ming Tsai (Toufen Township, Taiwan), Yu-Shiuan Wang (Taipei, Taiwan), Hung-Hsu Chen (Tainan, Taiwan), Wei-Yip Loh (Hsinchu, Taiwan) and Ya-Yi Cheng (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein relate generally t...