US Patent Issued to Taiwan Semiconductor Manufacturing on June 10 for "Bit line pre-charge circuit for power management modes in multi bank SRAM" (Canadian, Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,586, issued on June 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Bit line pre-charge circuit for power management modes in multi bank SRAM" was invented by Sanjeev Kumar Jain (Ottawa), Ruchin Jain (Hsinchu, Taiwan), Arun Achyuthan (Stittsville, Canada) and Atul Katoch (Kanata, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems and methods are provided for controlling a wake-up operation of a memory circuit. The memory circuit is configured to precharge the bit lines of a memory array sequentially during wakeup. A sleep signal is received by the first bit line of a memory cell and then a designed dela...