US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Trench formation scheme for programmable metallization cell to prevent metal redeposit" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,695, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Trench formation scheme for programmable metallization cell to prevent metal redeposit" was invented by Fu-Ting Sung (Yangmei, Taiwan), Chung-Chiang Min (Zhubei, Taiwan) and Yuan-Tai Tseng (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to an integrated chip having a bottom dielectric layer overlying a conductive wire. A bottom electrode is disposed within the bottom dielectric layer. A data storage layer overlies the bottom electrode. A top electrode overlies the data storage layer. A top surface of the top el...