US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "SRAM memory cell device comprising ferroelectric access and storage transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,600, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"SRAM memory cell device comprising ferroelectric access and storage transistors" was invented by Hung-Li Chiang (Taipei, Taiwan), Jer-Fu Wang (Taipei, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan) and Meng-Fan Chang (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A static random-access memory (SRAM) cell including a transistor is introduced. The transistor includes substrate and gate stack structure disposed over the substrate, in which the gate stack structure includes a gate oxide layer, a ferroelectric layer, and a conductive layer....