US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Snapback electrostatic discharge (ESD) circuit, system and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,729, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Snapback electrostatic discharge (ESD) circuit, system and method of forming the same" was invented by Chia-Lin Hsu (Hsinchu, Taiwan), Yu-Hung Yeh (Hsinchu, Taiwan), Yu-Ti Su (Hsinchu, Taiwan) and Wun-Jie Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A snapback electrostatic discharge (ESD) protection circuit includes a first well in a substrate, a drain region of a transistor, a source region of the transistor, a gate region of the transistor, and a second well embedded in the first well. The first well has a first dopant ...