US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Separate epitaxy layers for nanowire stack GAA device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,667, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Separate epitaxy layers for nanowire stack GAA device" was invented by Tung Ying Lee (Hsinchu, Taiwan), Kai-Tai Chang (Kaohsiung, Taiwan) and Meng-Hsuan Hsiao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The current disclosure describes techniques for forming gate-all-around ("GAA") devices from stacks of separately formed nanowire semiconductor strips. The separately formed nanowire semiconductor strips are tailored for the respective GAA devices. A trench is formed in a first stack of epitaxy layers to define a space for forming...