US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 8 for "Semiconductor structure having asymmetric source/drain regions" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,684, issued on July 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure having asymmetric source/drain regions" was invented by Hsing-I Tsai (Hsinchu, Taiwan), Fu-Huan Tsai (Kaohsiung, Taiwan), Chia-Chung Chen (Keelung, Taiwan), Hsiao-Chun Lee (Chiayi, Taiwan), Chi-Feng Huang (Hsinchu County, Taiwan), Cho-Ying Lu (Hsinchu, Taiwan) and Victor Chiang Liang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain ...