US Patent Issued to Taiwan Semiconductor Manufacturing on July 8 for "Semiconductor memory devices with dielectric fin structures" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,683, issued on July 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor memory devices with dielectric fin structures" was invented by Meng-Sheng Chang (Chu-bei, Taiwan) and Chia-En Huang (Xinfeng Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of first nanostructures extending along a first lateral direction. The semiconductor device includes a first epitaxial structure and second epitaxial structure respectively coupled to ends of each of the plurality of first nanostructures along the first lateral direction. The semiconductor device includes a...